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IRFR9220, IRFU9220, SiHFR9220, SiHFU9220
Vishay Siliconix
Power MOSFET
PRODUCT SUMMARY
VDS (V) RDS(on) () Qg (Max.) (nC) Qgs (nC) Qgd (nC) Configuration - 200 VGS = - 10 V 20 3.3 11 Single
S
FEATURES
1.5
* * * * * * * *
Dynamic dV/dt Rating Repetitive Avalanche Rated Surface Mount (IRFR9220/SiHFR9220) Straight Lead (IRFUFU9220/SiHFU9220) Available in Tape and Reel P-Channel Fast Switching Lead (Pb)-free Available
Available
RoHS*
COMPLIANT
DPAK (TO-252)
IPAK (TO-251)
DESCRIPTION
G
D P-Channel MOSFET
Third Power MOSFETs technology is the key to Vishay advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFETs design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU/SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
ORDERING INFORMATION
Package Lead (Pb)-free SnPb DPAK (TO-252) IRFR9220PbF SiHFR9220-E3 IRFR9220 SiHFR9220 DPAK (TO-252) IIRFR9220TRLPbFa SiHFR9220TL-E3a IRFR9220TRLa SiHFR9220TLa DPAK (TO-252) IRFR9220TRRPbFa SiHFR9220TR-E3a IRFR9220TRRa SiHFR9220TRa DPAK (TO-252) IRFR9220TRPbFa SiHFR9220T-E3a IRFR9220TRa SiHFR9220Ta IPAK (TO-251) IRFU9220PbF SiHFU9220-E3 IRFU9220 SiHFU9220
Note a. See device orientation.
ABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise noted
PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current VGS at - 10 V TC = 25 C TC = 100 C SYMBOL VDS VGS ID LIMIT - 200 20 - 3.6 - 2.3 - 14 0.33 0.020 310 - 3.6 4.2 42 2.5 - 5.0 - 55 to + 150 260d UNIT V
A
IDM Pulsed Drain Currenta Linear Derating Factor Linear Derating Factor (PCB Mount)e EAS Single Pulse Avalanche Energyb IAR Repetitive Avalanche Currenta EAR Repetitive Avalanche Energya Maximum Power Dissipation TC = 25 C PD TA = 25 C Maximum Power Dissipation (PCB Mount)e c dV/dt Peak Diode Recovery dV/dt Operating Junction and Storage Temperature Range TJ, Tstg Soldering Recommendations (Peak Temperature) for 10 s Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = - 50 V, Starting TJ = 25 C, L = 35 mH, RG = 25 , IAS = - 3.6 A (see fig. 12). c. ISD - 3.9 A, dI/dt 95 A/s, VDD VDS, TJ 150 C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91283 S-81411-Rev. A, 07-Jul-08
W/C mJ A mJ W V/ns C
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IRFR9220, IRFU9220, SiHFR9220, SiHFU9220
Vishay Siliconix
THERMAL RESISTANCE RATINGS
PARAMETER Maximum Junction-to-Ambient Maximum Junction-to-Ambient (PCB Mount)a Maximum Junction-to-Case (Drain) SYMBOL RthJA RthJA RthJC MIN. TYP. MAX. 110 50 3.0 C/W UNIT
Note a. When mounted on 1" square PCB (FR-4 or G-10 material).
SPECIFICATIONS TJ = 25 C, unless otherwise noted
PARAMETER Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage Gate-Source Leakage Zero Gate Voltage Drain Current Drain-Source On-State Resistance Forward Transconductance Dynamic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Internal Drain Inductance Internal Source Inductance Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current Pulsed Diode Forward Currenta Body Diode Voltage Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Forward Turn-On Time IS ISM VSD trr Qrr ton MOSFET symbol showing the integral reverse p - n junction diode
D
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
VDS VDS/TJ VGS(th) IGSS IDSS RDS(on) gfs Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf LD LS
VGS = 0 V, ID = - 250 A Reference to 25 C, ID = - 1 mA VDS = VGS, ID = - 250 A VGS = 20 V VDS = - 200 V, VGS = 0 V VDS = - 160 V, VGS = 0 V, TJ = 125 C VGS = - 10 V ID = - 2.2 Ab
- 200 - 2.0 1.1
- 0.22 -
- 4.0 100 - 100 - 500 1.5 -
V V/C V nA A S
VDS = - 50 V, ID = - 2.2 A
VGS = 0 V, VDS = - 25 V, f = 1.0 MHz, see fig. 5
-
340 110 33 8.8 27 7.3 19 4.5 7.5
20 3.3 11 nH ns nC pF
VGS = - 10 V
ID = - 3.9 A, VDS = - 160 V, see fig. 6 and 13b
-
VDD = - 100 V, ID = - 3.9 A, RG = 18 , RD = 24 , see fig. 10b
-
Between lead, 6 mm (0.25") from package and center of die contact
D
-
G
S
-
150 0.97
- 3.6 A - 14 - 6.3 300 2.0 V ns C
G
S
TJ = 25 C, IS = - 3.6 A, VGS = 0
Vb
-
TJ = 25 C, IF = - 3.9 A, dI/dt = 100 A/sb
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 s; duty cycle 2 %.
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Document Number: 91283 S-81411-Rev. A, 07-Jul-08
IRFR9220, IRFU9220, SiHFR9220, SiHFU9220
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 C, unless otherwise noted
Fig. 1 - Typical Output Characteristics, TC = 25 C
Fig. 3 - Typical Transfer Characteristics
Fig. 2 - Typical Output Characteristics, TC = 150 C
Fig. 4 - Normalized On-Resistance vs. Temperature
Document Number: 91283 S-81411-Rev. A, 07-Jul-08
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IRFR9220, IRFU9220, SiHFR9220, SiHFU9220
Vishay Siliconix
Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage
Fig. 7 - Typical Source-Drain Diode Forward Voltage
Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage
Fig. 8 - Maximum Safe Operating Area
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Document Number: 91283 S-81411-Rev. A, 07-Jul-08
IRFR9220, IRFU9220, SiHFR9220, SiHFU9220
Vishay Siliconix
RD VDS VGS RG D.U.T. + - 10 V
Pulse width 1 s Duty factor 0.1 %
VDD
Fig. 10a - Switching Time Test Circuit
td(on) VGS 10 %
tr
td(off) tf
90 % VDS
Fig. 9 - Maximum Drain Current vs. Case Temperature
Fig. 10b - Switching Time Waveforms
Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case
Document Number: 91283 S-81411-Rev. A, 07-Jul-08
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IRFR9220, IRFU9220, SiHFR9220, SiHFU9220
Vishay Siliconix
VDS L
IAS
IAS
- 20 V
Driver 0.01
tp
15 V
Fig. 12a - Unclamped Inductive Test Circuit
Fig. 12c - Maximum Avalanche Energy vs. Drain Current
- 10 V QGS
QG
12 V
VG
VGS
- 3 mA
Charge
IG ID Current sampling resistors
Fig. 13a - Basic Gate Charge Waveform
Fig. 13b - Gate Charge Test Circuit
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Document Number: 91283 S-81411-Rev. A, 07-Jul-08
+
D.U.T.
-
QGD
+ -
RG
D.U.T.
VDD A
tp VDS
Fig. 12b - Unclamped Inductive Waveforms
Current regulator Same type as D.U.T.
50 k 0.2 F 0.3 F
VDS
IRFR9220, IRFU9220, SiHFR9220, SiHFU9220
Vishay Siliconix
Peak Diode Recovery dV/dt Test Circuit
+
P.W. Period Ripple 5 %
D.U.T.
Circuit layout considerations * Low stray inductance * Ground plane * Low leakage inductance current transformer
RG
Compliment N-Channel of D.U.T. for driver
Driver gate drive D=
D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt
Re-applied voltage Inductor current
Body diode forward drop
*
VGS = - 5 V for logic level and - 3 V drive devices
Fig. 14 - For P-Channel
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91283.
Document Number: 91283 S-81411-Rev. A, 07-Jul-08
+ + * dV/dt controlled by RG * ISD controlled by duty factor "D" * D.U.T. - device under test
+ - VDD
P.W. Period VGS = - 10 V*
VDD
ISD
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Legal Disclaimer Notice
Vishay
Disclaimer
All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, "Vishay"), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners.
Document Number: 91000 Revision: 18-Jul-08
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